Abstract:Higher manganese silicide (HMS) is a promising thermoelectric (TE) semiconductor that operates effectively at medium temperatures. It is characterized by its abundance, environmental friendliness, and desirable impact resistance properties. To enhance the TE properties of HMS, this study employs isoelectronic anion and cation codoping, combined with embedded quantum dot (QD) techniques. The introduction of element doping and nanoinclusions, such as Mn 0.96 Re 0.04 (Si 0.96 Ge 0.04 ) 1.79 +1.5%Ag 2 Pt QDs sample, leads to an approximately 85% increase in electrical conductivity. This boost is attributed to the adjustment of the band structure through Re, Ge, and Ag element doping and the charge transfer facilitated by MnSi, Si, and Pt precipitates. Furthermore, the enhanced PF of 1.85 × 10 −3 W m −1 K −2 at 773 K is approximately 29% higher than that of pure HMS. Simultaneously, the increase in point defects hampers the improvement of lattice thermal conductivity ( κ l ) by intensively scattering short-wave phonons. This effect is complemented by the precipitation of Si, MnSi, Ag, and Pt nanoparticles, which increases the density of grain boundaries, enhances medium-wave phonon scattering, and substantially reduces κ l to 1.45 W m –l K −1 (at 773 K), ∼30% lower than that of pure HMS. The figure of merit of the sample containing 1.5%Ag 2 Pt QDs at 823 K attains a value of 0.69, which is ∼52% and ∼19% higher than that of pure HMS and Re-Ge-double-doped samples, respectively. The incorporation of isoelectronic codoping, along with the integration of metastable QDs, is demonstrated as an effective strategy for enhancing TE properties.

Preparation and Transport Properties of CeSi2/HMS Thermoelectric Composites

Improved Thermoelectric Performance of Higher Manganese Silicides with Ge Additions

Microstructure and Thermoelectric Properties of SiGe-added Higher Manganese Silicides

Microstructures and Thermoelectric Properties of Higher Manganese Silicide Prepared by Rapid Solidification and Hot Pressing

Composites of Higher Manganese Silicides and Nanostructured Secondary Phases and Their Thermoelectric Properties

Thermoelectric Properties of Undoped High Purity Higher Manganese Silicides Grown by Chemical Vapor Transport

Isoelectronic Re-Ge-codoped Higher Manganese Silicides with Enhanced Thermoelectric Properties Via Band Optimization, Charge Transfer, and Phonon Scattering

Bulk Higher Manganese Silicide Thermoelectric Materials and Modules

Enhancement of Thermoelectric Power Factor Bysi:Baddition to Higher Manganese Silicide Film

Effect of ball milling on the phase constitution and microstructure of induction melted Higher Manganese Silicides and their thermoelectric properties

Exploiting synergies for high thermoelectric performance in higher manganese silicide-based semiconductors through element Co-doping, energy filtering, and phonon scattering

Grain Size Effect on the Phase Transformations of Higher Manganese Silicide Thermoelectric Materials: an in Situ Energy Dispersive X-Ray Diffraction Study

Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides

Thermoelectric Properties and Grain Refinement of Ge-substituted P-type Higher Manganese Silicide Alloy

Influence of an Interlayer on Thermoelectric Power Factor of HMS Film on Quartz Substrate

Thermoelectric Properties of Manganese Silicide Films

MnS Incorporation into Higher Manganese Silicide Yields a Green Thermoelectric Composite with High Performance/Price Ratio.

Preparation and Thermoelectric Properties of Mg2Si1−xSnx

Preparation of Mn - Si Compound and Its Seebeck Effect

Thermoelectric Performance of Mg2-Xcaxsi Compounds

Enhancement Of Thermoelectric Power Factor Of Mnsi1.7 Films By Si Addition And Modulation Doping