Preparation and Thermoelectric Properties of Mg2Si1−xSnx

Q. Zhang,T. J. Zhu,A. J. Zhou,H. Yin,X. B. Zhao
DOI: https://doi.org/10.1088/0031-8949/2007/t129/028
2007-01-01
Physica Scripta
Abstract:Mg2Si1-xSnx (x = 0.2, 0.4, 0.6 and 0.8) thermoelectric materials have been prepared by vacuum melting and melting) hot-pressing methods. The phase structures and electrical transport properties were measured. The relationships between electronic structures and electronic properties are discussed. X-ray diffraction (XRD) showed that the hot-pressed compounds were better formed. The electrical conductivity and Seebeck coefficient measurements showed that the properties of the compounds were dramatically affected by solid solubility. When x = 0.2, the highest electrical conductivity resulted in the highest power factor of 1.32 x 10(-3)Wm(-1) K-2 at about 500 K, while the highest value of Seebeck coefficient of -459 mu VK-1 was obtained at about 450K for x = 0.6.
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