Thermoelectric Properties of N-Type La-doped Mg2Si Based Semiconductors

ZHANG Qian,ZHU Tie-jun,YIN Hao,ZHAO Xin-bing
DOI: https://doi.org/10.3321/j.issn:1001-9731.2008.12.021
2008-01-01
Journal of Functional Biomaterials
Abstract:Mg2-xLaxSi(x=0,0.002,0.005,0.010,0.015) was prepared by induction melting and hot-pressing.It was found that La atoms preferentially occupy Mg sites,and the trace of LaMg phase occurs when x≥0.005.Property measurements indicate an n-type conduction mechanism for Mg2-xLaxSi.With increasing La content,the electrical and the thermal conductivity increase,while the absolute value of Seebeck coefficient decreases.A dimensionless figure of merit ZT about 0.42 at 774K is attained for Mg1.995La0.005Si.
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