Abstract:Mg 3 Sb 2 -based n-type materials are consisted of earth-abundant elements and possess comparable thermoelectric properties with n-type Bi 2 Te 3 at low temperatures, which make them promising candidates for cooling and power generation applications in terms of cost and performance. Substitution of Sb atom with chalcogen elements (Te, Se S) is a conventional method for n-type doping, but doping cations such as rare-earth elements and transition metals is also widely studied for its unique advantages. In this study, La and Mn were selected for co-doping of Mg3SbBi, and the thermoelectric performances of the doped materials were investigated. Mg 3 La 0.005 Mn x SbBi (0  x  0.015) polycrystalline samples were made by sintering the fine powders of the mother alloy after arc melting, in which elemental Mn and LaSb compound were included for n-type dual doping. Considering the loss of Mg at elevated temperatures by vaporization, the molar ratio of Mg, Sb, and Bi in the mixture for arc melting was set to 4 : 1 : 1 with excess Mg. Analysis shows that all the samples are n-type, and the electrical conductivity of Mg 3 La 0.005 Mn 0.015 SbBi increased by 62% from the Mn-free Mg 3 La 0.005 SbBi at 298 K. In addition, the lattice thermal conductivity (  lat ) decreased with increasing Mn content in the measured temperature range of 298-623 K. The minimum value of  lat was about 0.60 W m -1 K -1 in Mg 3 La 0.005 Mn 0.015 SbBi at 523 K, which is about 19% smaller than that of the Mn-free sample. As a result of these enhancements in thermoelectric performance, the maximum figure of merit ( zT max ) of 1.12 was obtained in Mg 3 La 0.005 Mn 0.01 SbBi and Mg 3 La 0.005 Mn 0.015 SbBi at 573 K, and the zT at 298 K increased by 73% to 0.35 in Mg 3 La 0.005 Mn 0.015 SbBi compared to Mn-free Mg 3 La 0.005 SbBi, which is beneficial to room-temperature applications.

Thermoelectric Properties of N-type Mg 3 La 0.005 Mn x SbBi Materials Doped with La and Mn

Enhanced Thermoelectric Performance in N‐Type Mg3.2Sb1.5Bi0.5 by La or Ce Doping into Mg

Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

Effects of Bi and Sb Doping on the Thermoelectric Performance of N-Type Quaternary Mg2.18Ge0.1Si0.3Sn0.6 Materials

Promoted application potential of p-type Mg3Sb1.5Bi0.5 for the matched thermal expansion with its n-type counterpart

Electrical property enhancement and lattice thermal conductivity reduction of n-type Mg3Sb1.5Bi0.5-based Zintl compound by In&Se co-doping

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Outstanding Room-Temperature Thermoelectric Performance of N-Type Mg3Bi2-Based Compounds Through Synergistically Combined Band Engineering Approaches

High Thermoelectric Performance at Room Temperature of N-Type Mg 3 Bi 2 -Based Materials by Se Doping

Enhanced thermoelectric performance of n-type Mg3Bi2-based materials by Se doping and alloying engineering

Band Structure and Thermoelectric Properties of Al-doped Mg 3− X Al X Sb 2 Compounds

Extraordinary Thermoelectric Performance in N-Type Manganese Doped Mg3Sb2 Zintl: High Band Degeneracy, Tuned Carrier Scattering Mechanism and Hierarchical Microstructure

Enhanced Thermoelectric Performance in P-Type Mg 3 Sb 2 Via Lithium Doping

Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Enhancing the Thermoelectric Performance of P-Type Mg3Sb2 Via Codoping of Li and Cd

Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics

High-Performance Mg<sub>3</sub>Sb<sub>2-<i>x</i></sub>Bi<i><sub>x</sub></i> Thermoelectrics: Progress and Perspective

High‐Performance N‐type Mg3Sb2 Towards Thermoelectric Application Near Room Temperature

Band Engineering and Phonon Engineering Effectively Improve N-Type Mg3Sb2 Thermoelectric Material Properties.