In Situ Synthesis and Thermoelectric Properties of La-Doped Mg-2(Si, Sn) Composites

Q. Zhang,J. He,X. B. Zhao,S. N. Zhang,T. J. Zhu,H. Yin,T. M. Tritt
DOI: https://doi.org/10.1088/0022-3727/41/18/185103
2008-01-01
Abstract:Utilizing the peritectic reaction and the miscibility gap featured in the pseudo-binary phase diagram of Mg2Si and Mg2Sn, we fabricated environmentally friendly Mg-2(Si, Sn) thermoelectric (TE) composites in which the Mg2Si-rich bulk grains were in situ coated by Mg2Sn-rich thin layers. The Mg2Sn-rich grain boundary phase was selectively doped with La. It was found that the La doping dramatically increased the electrical conductivity to thermal conductivity ratio in the composites. As a result, a dimensionless figure of merit ZT similar to 0.81 has been attained at 810 K for the Mg2-xLax(Si, Sn) in situ composite with x = 0.005, significantly higher than the ZT similar to 0.18 at 540 K for the undoped composite and comparable to ZT similar to 0.8 of state-of-the-art PbTe intermediate temperature TE alloys.
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