Abstract:Ferroelectric structures are being used in SRAM devices and are migrating to DRAM devices. A DRAM cell size can be dramatically reduced by employing ferroelectric structures in place of the current silicon oxide capacitor structures. A 5μ2 DRAM cell capacitor can be reduced in size by a factor of 20 using a ferroelectric structure. The current technology used to etch ferroelectric device layers has at least two major shortcomings. The first etch issue is the sloped profiles (i.e. 40°) which are a result of the high ion energies used to etch the relatively non volatile materials (Platinum and PZT). The second etch issue is severe sidewall redeposition when vertical profiles are obtained by using ion mills etc. The etch products that are redeposited on the sidewalls become very difficult or impossible to remove in a manufacturing environment. Profiles of > 75° without heavy redeposition will be required in order for 0.5μ DRAMs to be produced using ferroelectric technology. A series of designed experiments were developed to understand the dependent variables impact on reducing residues and increasing the etched feature's profile angle. Response surfaces were developed for resist selectivity, profile angle, and etch rate versus changes in KHz power, cathode temperature, reactant gas flow and additive gas flow in an HRe − (High Density Reflected Electron) etch system. The process results (optical emission and SEM analysis) were statistically evaluated and process trends developed. The resulting response surface graphs combined with SEM micrographs demonstrate trends in profile control and etch rate. The process trends are reviewed which result in > 75° residue-free etching of ferroelectric devices.

Rie Effect On The Ferroelectric Properties

Reactive Ion Etching And Ion Beam Etching For Ferroelectric Memories

Reactive ion beam etching for diffractive optical elements

Etching behavior and damage rejuvenation of top electrode and Bi 3:15Nd0:85Ti3O12 films applied in ferroelectric random access memory devices

Etching Behavior and Damage Rejuvenation of Top Electrode and Bi3.15Nd0.85Ti3O12 Films Applied in Ferroelectric Random Access Memory Devices

Study of iridium bottom electrode in ferroelectric random access memory application

Effects of electrodes on the properties of sol–gel PZT based capacitors in FeRAM

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Reactive Ion Etching of Sol-Gel derived PZT thin film and Pt/Ti bottom electrode for FRAM

Plasma etch processing of advanced ferroelectric devices

Challenges for plasma etch integration of ferroelectric capacitors in FeRAM's and DRAM's

Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

Investigation on Annealing and Etching Effects for Pt/Bi3.15nd0.85ti3o12/Pt Ferroelectric Capacitors

Model and key fabrication technologies for FeRAM

Effects of the Top-Electrode Annealing on the Ferroelectric Properties of Bifeo3 Thin Films

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Study on Pb(Zr, Ti)O3 capacitors for ferroelectric random access memory

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Manipulating the Exchange Bias Effect of Pb(Zr0.52ti0.48)O-3/Cofe2o4/Nio Heterostructural Films by Electric Fields

ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles