Abstract:The ferroelectric capacitance is usually nonlinear against increasing/decreasing voltage in sweeping time longer than 1 s and achieves a maximum value at around a coercive voltage within each loop. With the improved short-pulse measurements, we estimated the differential capacitance of ferroelectric Au/BiFeO3/LaNiO3/SrTiO3 thin-film capacitors from a nanosecond discharging current induced by a delta voltage after a stressing voltage pulse with widths of 500 ns–50 ms. With the shortening of the voltage sweeping time, we clearly observed two capacitance maxima from each branch of a capacitance-voltage (C-V) loop, reminiscent of an antiferroelectric behavior. After transformation of nanosecond domain switching current transients under pulses into polarization–voltage hysteresis loops, we further measured time dependent polarization retention as well as imprint in the range of 100 ns–1 s. Both positive and negative polarizations decay exponentially at characteristic times of 2.25 and 198 μs, suggesting the coexistence of preferred domains pointing to top and bottom electrodes in most epitaxial films. This exponential time dependence is similar to the dielectric degradation under a dc voltage, and the polarization retention can be improved through long-time opposite voltage stressing. With this improvement, the additional antiferroelectric-like dielectric maximum within each branch of a C-V loop disappears. This experiment provides the strong evidence of the effect of time-dependent charge injection on polarization retention and dielectric degradation.

Effects of the Top-Electrode Annealing on the Ferroelectric Properties of Bifeo3 Thin Films

Top Electrode Postanneal Effect on Ferroelectric Properties of Pt/Srbi2ta2o9/Pt Capacitors

Investigation on Annealing and Etching Effects for Pt/Bi3.15nd0.85ti3o12/Pt Ferroelectric Capacitors

Etching Behavior and Damage Rejuvenation of Top Electrode and Bi3.15Nd0.85Ti3O12 Films Applied in Ferroelectric Random Access Memory Devices

Etching behavior and damage rejuvenation of top electrode and Bi 3:15Nd0:85Ti3O12 films applied in ferroelectric random access memory devices

Effects of Annealing Temperature on the Structures, Ferroelectric and Magnetic Properties of Aurivillius Bi5ti3feo15 Polycrystalline Films

Effects of thermal anneal temperature on electrical properties and energy-storage density of Bi(Ni 1/2 Ti 1/2 )O 3 –PbTiO 3 thin films

Effects of annealing treatment on fatigue recovery of lead zirconate titanate thin films

Transmission Electron Microscopy Investigation of Pt/Ba0.7Sr0.3TiO3/Pt Capacitors with Different Annealing Processes

Preparation and Electrical Properties of Bi 3.25 Pr 0.75 Ti 3 O 12 Ferroelectric Thin Films

Ferroelectric Properties of BiFexCr1-xO3 Thin Film Formed on Pt Electrodes

Effects of Integration Processes on the Ferroelectric Performance of SrBi/sub 2/ta/sub 2/o/sub 9/ Capacitors

Effects of anneal atmosphere on the structural and ferroelectric properties of SrBi2Ta2O9 thin films

Structure and Electrical Properties of Bi3.15nd0.85ti3o12 Ferroelectric Thin Films

Electrical Properties of Chemical-Solution-derived Bi3.54Nd0.46Ti3O12 Ferroelectric Thin Films

Nonlinear Antiferroelectric-Like Capacitance-Voltage Curves in Ferroelectric Bifeo3 Thin Films

BiFeO3 thin films prepared on metallic Ni tapes by chemical solution deposition: effects of annealing temperature and a La0.5Sr0.5TiO3 buffer layer on the dielectric, ferroelectric and leakage properties

Impact of annealing atmosphere on the multiferroic and dielectric properties of BiFeO<sub>3</sub>/Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films

Relation between properties of PbLaTiO3 ferroelectric thin films and thermal annealing processes

Effect of microstructure on the ferroelectric properties of Eu-doped Bi-4 Ti-3 O-12 ferroelectric thin film

Preparation and ferroelectric properties of (Na0.5Bi0.5)0.94Ba0.06TiO3 thin films deposited on Pt electrodes using LaNiO3 as buffer layer