Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films

G. L. Chen,Y. Li,J. Lin,C. H. A. Huan,Y. P. Guo
DOI: https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I
1999-01-01
Surface and Interface Analysis
Abstract:Thin films of CN, were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the C=N phase decreases upon annealing in a vacuum, The XPS N Is peaks indicate the component due to the C=N bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra, These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C3N4 structures in films annealed at 700 degrees C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen. Copyright (C) 1999 John Wiley & Sons, Ltd.
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