Abstract:Analytical expressions for the low-field mobility of charge carrier gases with three-(3D), two-(2D) and one-(1D) dimensionalities are obtained. Multi-ion ionized impurities scattering, acoustic and polar optic phonons are considered as scattering mechanisms. The calculated values of mobility are compared to known experimental data for bulk (3D) n-and p-type wurtzite, n-type zinc-blende GaN crystals and low dimensional (2D and 1D) ternary GaAlN compounds. The resulting analytical expressions give the dependences of mobility on dimensionality of charge carrier gas, its density, effective mass, temperature and confining dimensions. A comparison of the experimental and calculated temperature dependences of the mobility in bulk GaN crystals (3D) and in AlGaN/GaN nanowires (1D) shows that the mobility atT>100Kis determined by the scattering of charge carriers by polar optical phonons with an energy of 91.2 meV. The temperature dependences of mobility in Al0.25Ga0.75N/GaN heterostructures (2D) atT>100Kare in consistent with experiment for electron scattering by polar optical phonons with a noticeably higher energy of 160 meV. We associate this fact with the heterointerface, which according to well-known theoretical studies can change both the strength of electron polar optical phonons scattering and the energy of the phonons.

Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

Quantum and Transport Scattering Times in Modulation-Doped AlxGa1-xN/GaN Single Quantum Wells

Weak Localization and Magnetointersubband Scattering Effects in an Alxga1-Xn/Gan Two-Dimensional Electron Gas

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Two-dimensional Electron Transport in AlGaN/GaN Heterostructures

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Magnetotransport investigation of modulation-doped AlxGa1-xN/GaN heterostructures

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Weak Anti-Localization of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN∕GaN Heterostructures with Two Subbands Occupation

Anti-weak localization of the two dimensional electron gas in modulation-doped AlxGa1-xN/GaN single quantum well

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Electron Scattering in GaAs/InGaAs Quantum Wells Subjected to an In-Plane Magnetic Field

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Oscillations of low-field magnetoresistivity of two-dimensional electron gases in Al 0.22Ga 0.78N/GaN heterostructures in a weak localization region