Weak Anti-Localization of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN∕GaN Heterostructures with Two Subbands Occupation
J Lu,B Shen,N Tang,DJ Chen,H Zhao,DW Liu,R Zhang,Y Shi,YD Zheng,ZJ Qiu,YS Gui,B Zhu,W Yao,JH Chu,K Hoshino,Y Arakawa
DOI: https://doi.org/10.1063/1.1803949
IF: 4
2004-01-01
Applied Physics Letters
Abstract:Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N∕GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time τe, dephasing time τϕ and spin-orbit scattering time τso at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature.