Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Evidence for A General Mechanism Modulating Carrier Lifetime in Sic

Tuning Minority-Carrier Lifetime Through Stacking Fault Defects: the Case of Polytypic Sic

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

In Situ Monitoring of Stacking Fault Formation and Its Carrier Lifetime Mediation in P-Type 4H-Sic

Unveiling Phonon Frequency-Dependent Mechanism of Heat Transport Across Stacking Fault in Silicon Carbide

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime

Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions

Stacking Fault Duplication in 6H-Sic Single Crystal

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-Sic Homoepitaxial Films

Modified Generalized Stacking Fault Energy Surface of II-VI Ionic Crystals from Excess Electrons and Holes

Stacking Faults in 4h–sic Epilayers and IGBTs

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs

Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing

Ab Initio Molecular Dynamics Simulation of the Effects of Stacking Faults on the Radiation Response of 3C-Sic

Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon