Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions

Machine-learning enhanced thermal stability investigation of single Shockley stacking faults in 4H-SiC

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Ab Initio Molecular Dynamics Simulation of the Effects of Stacking Faults on the Radiation Response of 3C-Sic

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode

Comparison of single Shockley-type stacking fault expansion rates in 4H-SiC under ultraviolet illumination after hydrogen or fluorine ion implantation

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Mechanism of novel defect multiplication impacting high power 4H-SiC devices

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-Sic Homoepitaxial Films

In Situ Monitoring of Stacking Fault Formation and Its Carrier Lifetime Mediation in P-Type 4H-Sic

Unveiling Phonon Frequency-Dependent Mechanism of Heat Transport Across Stacking Fault in Silicon Carbide

Evidence for A General Mechanism Modulating Carrier Lifetime in Sic

Electron Confinement Due to Stacking Control of Atomic Layers in SiC Polytypes: Roles of Floating States and Spontaneous Polarization

Stacking Faults in 4h–sic Epilayers and IGBTs

Optical charge state control of spin defects in 4H-SiC

Soft Modes at the Stacking Faults in SiC Crystals

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution