Abstract:As a common impurity in 4H silicon carbide (4H-SiC), hydrogen (H) may play a role in tuning the electronic properties of 4H-SiC. In this work, we systemically explore the effect of H on the electronic properties of both n-type and p-type 4H-SiC. The passivation of H on intrinsic defects such as carbon vacancies (V-C) and silicon vacancies (V-Si) in 4H-SiC is also evaluated. We find that interstitial H at the bonding center of the Si-C bond (H-i(bc)) and interstitial H at the tetrahedral center of Si (H-i(Si-te)) dominate the defect configurations of H in p-type and n-type 4H-SiC, respectively. In n-type 4H-SiC, the compensation of H-i(Si-te) is found to pin the Fermi energy and hinder the increase of the electron concentration for highly N-doped 4H-SiC. The compensation of H-i(bc) is negligible compared to that of V-C on the p-type doping of Al-doped 4H-SiC. We further examine whether H can passivate V-C and improve the carrier lifetime in 4H-SiC. It turns out that nonequilibrium passivation of V-C by H is effective to eliminate the defect states of V-C, which enhances the carrier lifetime of moderately doped 4H-SiC. Regarding the quantum-qubit applications of 4H-SiC, we find that H can readily passivate V-Si during the creation of V-Si centers. Thermal annealing is needed to decompose the resulting V-Si-nH (n = 1-4) complexes and promote the uniformity of the photoluminescence of V-Si arrays in 4H-SiC. The current work may inspire the impurity engineering of H in 4H-SiC.

Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing

Effects of annealing on carrier lifetime in 4H-SiC

Minority Carrier Lifetime of Thermal Oxide Passivated CZ Si Wafers

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Enhancement of Minority-Carrier Lifetime by an Advanced High Temperature Annealing Method

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Improved Surface Passivation of Rear SiN x /AlO x Stacks in p-Type Boron-Doped Czochralski Silicon Wafers During Dark Annealing at Elevated Temperatures

Improved Surface Passivation of Rear SiN X /alo X Stacks in P‐type Boron‐Doped Czochralski Silicon Wafers During Dark Annealing at Elevated Temperatures

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Thermal stability of hydrogenated amorphous silicon passivation for p‐type crystalline silicon

Effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Improving Interface Quality of 4H-Sic MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface

Negatively Charged Silicon Nitride Films for Improved P-Type Silicon Surface Passivation by Low-Temperature Rapid Thermal Annealing

Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Silicon

Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Ultra-high Voltage 4H-Sic Thyristor with Inhomogeneous Carrier Lifetime

THE IMPACT OF IMPURITIES ON MINORITY CARRIER LIFETIME OF MULTICRYSTALLINE SILICON