Abstract:To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory technology. To ensure the required retention time and to maintain the scalability of floating gate memory transistor, the charge store in future memory transistor should be accompanied with the high-k insolated metal or conductive clusters, islands, or nano-particles. This work proposes a simple method to fabricate high-k isolated metal cluster array. An HfO2/Au/HfO2 stack was first grown by using atomic layer deposition (ALD) and thermal evaporation, respectively, for HfO2 and Au film deposition. After a high-temperature thermal annealing, a number of HfO2-buried Au islands with diameter of about 5 to10nm were obtained. Capacitance–voltage (C–V) measurements show that the charge storage characteristics of the Au-embedded HfO2 structure were affected greatly by the annealing conditions. Depending on the annealing temperature (it should be governed by thickness of Au layer also), the thermal annealing may lead to the formation of Au islands/clusters, the improvement of HfO2 blocking property as a result of defect removal, or the deterioration of the blocking property of HfO2 due to the crystallization of HfO2 film. Process optimization should be conducted for further improving the charge localization characteristics.

Enhancement of Minority-Carrier Lifetime by an Advanced High Temperature Annealing Method

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

THE IMPACT OF IMPURITIES ON MINORITY CARRIER LIFETIME OF MULTICRYSTALLINE SILICON

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing

Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon

Effects of annealing on carrier lifetime in 4H-SiC

Minority Carrier Lifetime of Thermal Oxide Passivated CZ Si Wafers

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films

Effects of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Wafer

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

On the Low Carrier Lifetime Edge Zone in Multicrystalline Silicon Ingots

Synergistic Thermal and Electron Wind Force-Assisted Annealing for Extremely High-Density Defect Mitigation

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors