Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.

Ultra-high Voltage 4H-Sic Thyristor with Inhomogeneous Carrier Lifetime

Influence of P- Blocking Base Carrier Lifetime on Characteristics of SiC Light-Triggered Thyristor

Low Ron,sp.diff and Ultra-high Voltage 4H-Sic N-Channel IGBTs with Carrier Lifetime Enhancement Process

Improved Turn-on Characteristics of 4H SiC Asymmetrical Thyristor with Double Epitaxial N-Base

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

A high di/dt 4H-SiC thyristor with ‘-shaped’ n-base

Ultrafast Bulk Carrier Recombination Transients in N-Type and Semi-Insulating 4H-Sic Crystals

Minority Carrier Transport Enhancement in SiC LTT by Graded Doping Profile

Simulation study on the turn-on character of 700 V 4H-SiC thyristors

Effect of carrier lifetimes on forward characteristics of MOS-controlled thyristors

Effects of annealing on carrier lifetime in 4H-SiC

Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time

Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Hole-transmission Enhancement in 4H-Silicon Carbide Light Triggered Thyristor for Low Loss

Design and Characterization of High-Voltage 4H-Sic P-Igbts

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Simulation, Fabrication and Characterization of 4500v 4H-Sic Jbs Diode

Study and Optimal Simulation of 4H-Sic Floating Junction Schottky Barrier Diodes' Structures and Electric Properties

Research of Single-Event Burnout in 4H-Sic JBS Diode by Low Carrier Lifetime Control