Influence of P- Blocking Base Carrier Lifetime on Characteristics of SiC Light-Triggered Thyristor

Liqi An,Hongbin Pu,Xi Wang,Xinyu Tang,Qing Liu

DOI: https://doi.org/10.1109/edssc.2019.8754399

2019-01-01

Abstract:The influence of p$^{-}$ blocking base carrier lifetime on characteristics of SiC light-triggered thyristor (LTT) is studied by numerical simulation. The results indicate that longer p$^{-}$ blocking base carrier lifetime leads to lower on-state voltage drop. And the effects of p$^{-}$ blocking base minority carrier lifetime on turn-on characteristics of SiC LTT are related to the depletion width of p$^{-}$ blocking base region at different bias voltages. In the same range of p$^{-}$ base lifetime change from 0.13$\mu$s to 10$\mu$s, the turn-on delay time of the LTT, in which the p$^{-}$ blocking base is not completely depleted, is reduced from 5.52$\mu$s to 1.53$\mu$s at a forward voltage of 850V. However, the turn-on delay time of the LTT, in which p$^{-}$ blocking base is fully depleted, keeps almost unchanged at the voltages of 1700V and 8500V.