Injection Modulation of P(+)-N Emitter Junction in 4H-Sic Light Triggered Thyristor by Double-Deck Thin N-Base

Xi Wang,Hongbin Pu,Qing Liu,Chunlan Chen,Zhiming Chen

DOI: https://doi.org/10.1088/1674-1056/26/10/108505

2017-01-01

Chinese Physics B

Abstract:To overcome hole-injection limitation of p + -n emitter junction in 4H-SiC light triggered thyristor, a novel highvoltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by twodimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The holeinjection of p + -n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin nbase. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by500-m W/cm~2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.