Abstract:Influence of Indium doping on acceptor activation energy in p-type AlxGa1-xN was presented.The p-type AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD).TMIn flow rate is varied as 0,40,80 and 120 sccm while keeping other growth conditions changeless.X-ray diffraction (XRD) was used to determine the crystalline quality and Al composition in AlxGa1-xN epilayers.At room temperature,the resistivity of p-type Al0.43Ga0.57N epilayer grown In doping is in order of 104 Ω·cm,but that grown without In is above 1 × 106 Ω·cm.Variable temperature Hall-effect measurements were employed to determine the acceptor activation energy in p-type Al0.43Ga0.57N epilayers.It was seen that the acceptor activation energy decreases significantly with the introduction of In.The minimum of 259 meV is obtained at TMIn flow rate of 80 sccm.It was suggested that acceptor-donor-acceptor (A-D-A) complexes could be formed in p-type Al0.43 Ga0.57 N epilayers.The formation of A-D-A complexes would decrease the acceptor activation energy in p-type Al0.43Ga0.57N epilayers due to lower activation energy for AD-A complexes.In order to verify the influence of the In-ambient on acceptor activation energy,the ultraviolet light-emitting diodes (UV-LEDs) were fabricated.It was seen that there are a lower turn-on voltage and a lower diode series resistance for the UV-LEDs fabricated with p-type Al0.43 Ga0.57 N grown under In-doping,compared with that without In-ambient.

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Influence of P- Blocking Base Carrier Lifetime on Characteristics of SiC Light-Triggered Thyristor

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

The Hot-Carrier-Induced Degradation of Soi Ligbt under Ac Stress Conditions

Numerical Study on Light Triggering Characteristics of NiO/SiC Heterojunction Thyristor

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Shortening Turn-on Delay of SiC Light Triggered Thyristor by 7-Shaped Thin N-Base Doping Profile

4H-Sic Light Triggered Thyristor with Hole-Injection Enhanced N Short Base for Low Power Dissipation

Investigation of an A-Si/c-si Interface on a C-Si(p) Substrate by Simulation

Hole-transmission Enhancement in 4H-Silicon Carbide Light Triggered Thyristor for Low Loss

Simulation Study of Single Event Effects in the SiC LDMOS with a Step Compound Drift Region

Mechanism of Non-Saturated Field Electron Emission from Gated P-Type Si Tips

Simulation and Analysis of Inverse-Mode Operation of Single Event Transient Mechanisms on NPN-SiGe HBT

Influence of Indium Doping on Acceptor Activation Energy in P-Type Al_xGa_(1-x)N

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT with Enhanced Emitter Injection

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Property Investigation of A-Si/c-si Hetero-Junction Structure

Minority Carrier Transport Enhancement in SiC LTT by Graded Doping Profile

Simulation Study of a Novel Thin Layer SOI Carrier-Stored TLIGBT with Self-Biased Pmos

Uniform Current Supply in Gated P-Type Si-Tips for Achieving High-Performance Field Electron Emitter Array