Abstract:A novel low loss silicon on insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed and investigated by simulation. It features a self-adapted parasitic thyristor ( ${T} ^{\ast}$ ), which is introduced owing to a P-drift region and an N carrier-stored (CS)-layer at the cathode side (PT LIGBT). In the ON-state, the ${T} ^{\ast} $ is easily triggered as the sum of current gains of parasitic transistor (P $\boldsymbol {+}$ anode/N-buffer/P-drift and N-buffer/P-drift/N-CS) equals to one, and then the PT LIGBT could enter the bipolar conduction state without the snapback effect. During the voltage rising period of turning off, the triggered ${T} ^{\ast} $ remains ON-state for some time and prevents from forming and expanding depletion region in the P-drift, because the anode voltage ( ${V}_{\text {A}}$ ) is sustained by the low hole density quasi-neutral P-drift region and remains a low value. During this period, the ON-state ${T} ^{\ast} $ prolongs the voltage rising time and extracts excess carriers at low ${V}_{\text {A}}$ value, which greatly reduces the current dropping time. Therefore, the turn-off loss ( ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ ) is obviously reduced. During short-circuit, the PT LIGBT introduces P-drift to create an additional high temperature point at the anode side, helping to optimize heat distribution and lengthens the short-circuit time. At the same ON-state voltage ( ${V}_{ \mathrm{\scriptscriptstyle ON}}$ ) and 300 K, the ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ of PT LIGBT is 65.6% and 50.2% lower than that of N-drift Con. LIGBT and LIGBT with CS layer (CS LIGBT), respectively. The PT LIGBT improves the short-circuit time by 12% compared with that of the CS LIGBT.

Hole-transmission Enhancement in 4H-Silicon Carbide Light Triggered Thyristor for Low Loss

4H-Sic Light Triggered Thyristor with Hole-Injection Enhanced N Short Base for Low Power Dissipation

Shortening Turn-on Delay of SiC Light Triggered Thyristor by 7-Shaped Thin N-Base Doping Profile

4H-Sic Light Triggered Thyristor with Gradually Doped Thin N-Base

Minority Carrier Transport Enhancement in SiC LTT by Graded Doping Profile

4H-Sic Double-Layer Thin N-Base Light Triggered Thyristor with a Trenched-Junction Isolated Amplifying Gate

Injection Modulation of P(+)-N Emitter Junction in 4H-Sic Light Triggered Thyristor by Double-Deck Thin N-Base

Numerical Study on Light Triggering Characteristics of NiO/SiC Heterojunction Thyristor

Influence of P- Blocking Base Carrier Lifetime on Characteristics of SiC Light-Triggered Thyristor

Double-Shielded Interposer with Highly Doped Layers for High-Speed Signal Propagation

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT with Enhanced Emitter Injection

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Simulation Study of a Novel Low-Loss N-Channel SOI LIGBT with a Self-Adapted Parasitic Thyristor

Low-Loss Carrier Stored Trench-Gate Bipolar Transistor with Split-Gate Optimization

Simulation Study of a Novel Thin Layer SOI Carrier-Stored TLIGBT with Self-Biased Pmos

Low Turn-Off Loss 4H-Sic Insulated Gate Bipolar Transistor with a Trench Heterojunction Collector

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

Simulation Study of A 1200V 4H-SiC Lateral MOSFET With Reduced Saturation Current

Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor with Double Deep P-Regions

A high di/dt 4H-SiC thyristor with ‘-shaped’ n-base