Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Tuning Minority-Carrier Lifetime Through Stacking Fault Defects: the Case of Polytypic Sic

Evidence for A General Mechanism Modulating Carrier Lifetime in Sic

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

In Situ Monitoring of Stacking Fault Formation and Its Carrier Lifetime Mediation in P-Type 4H-Sic

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Unveiling Phonon Frequency-Dependent Mechanism of Heat Transport Across Stacking Fault in Silicon Carbide

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Relationship Between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon

Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Silicon

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Stacking faults at the boundary between 15R- and 4H-polytype in SiC

Stacking Fault Duplication in 6H-Sic Single Crystal

Effect of oxygen concentration on minority carrier lifetime at the bottom of quasi-single crystalline silicon

Nano-twins and Stacking Faults Induced by Picosecond Laser Dicing with Low Fluence Strengthening Monocrystalline Silicon

Mechanism of novel defect multiplication impacting high power 4H-SiC devices

Defect-Type-Dependent Carrier Lifetimes in Monolayer WS2 Films

THE IMPACT OF IMPURITIES ON MINORITY CARRIER LIFETIME OF MULTICRYSTALLINE SILICON

Direct Imaging and Optical Activities of Stacking Faults in 4H-Sic Homoepitaxial Films

Stacking Faults in 4h–sic Epilayers and IGBTs