Abstract:High-quality dielectric films are indispensable for field-effect electronic devices to provide high electrical performance. However, deposition of high-quality dielectric films on flexible substrate remains a challenging task, which greatly limits the electrical performance of flexible or organic field-effect devices. A room-temperature deep ultraviolet (DUV) irradiation process is proposed for densification of solution-processed La2O3 films. It is found that room-temperature DUV-La2O3 films not only exhibit leakage and dielectric properties that are comparable to those of high-temperature annealed-La2O3 films, but also have very smooth and clean surfaces and excellent bending strain tolerance. The fabricated La2O3 films exhibit a wide band gap (5.78 eV), high dielectric constant (12.68), low leakage density (8.8 x 10(-7) A cm(-2) at 2 MV cm(-1)), and high breakdown field strength (3.5 MV cm(-1)). Organic thin-film transistors (OTFTs) based on high-quality solution-processed La2O3 gate dielectrics show a low operation voltage (<= 3 V), low gate leakage current (<10(-9) A), and high I-on/I-off ratio (>10(5)). Based on these room-temperature-fabricated high-performance OTFTs, low-voltage complementary integrated circuits are successfully fabricated, including complementary inverters and NAND gate circuits. The results demonstrate that room-temperature DUV-processed La2O3 films are ideal gate dielectric materials for future flexible and low-power-consumption electronic devices.

Metalorganic Chemical Vapor Deposition of Lanthanum Aluminate Thin Films for Gate Dielectrics

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Growth and Characteristics of La2o3 Gate Dielectric Prepared by Low Pressure Metalorganic Chemical Vapor Deposition

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

Structure And Dielectric Properties Of Amorphous Laalo3 And Laaloxny Films As Alternative Gate Dielectric Materials

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Pulsed Laser Deposition of Aluminate YAlO 3 and LaAlO 3 Thin Films for Alternative Gate Dielectric Applications

Investigation of High-Quality Ultra-Thin Laalo3, Films As High-K Gate Dielectrics

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

The Thermal Stability And Electrical Properties Of Laero(3) Films As High-K Gate Dielectrics

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

The thermal stability and electrical properties of LaErO<sub>3</sub>films as high-<i>k</i>gate dielectrics

Thermal Stability Of Laalo3/Si Deposited By Laser Molecular-Beam Epitaxy

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics