Abstract:Top-seeded solution growth (TSSG) is a crucial technique for producing high-quality SiC crystals, with the quality of the crystal being significantly influenced by the temperature, flow, and carbon concentration in the solution. A global numerical simulation has been performed to investigate the effects of solution height and crystal rotation in SiC crystal growth. The simulation results indicate that as the solution height increases, there are two distinct flow patterns: single-vortex pattern and double-vortex pattern. Because of the change in the flow pattern, the flow field beneath the seed crystal and free surface will undergo a significant change. The varying effects of seed crystal rotation are also demonstrated under different solution height scenarios. Increasing the rotational speed of the seed crystal will enhance the stability of the solution flow field and crystal growth rate for the single-vortex pattern. Increasing the rotational speed or solution height appropriately is beneficial for enhancing the crystal growth rate in the double-vortex pattern. Excessively high rotational speeds or solution heights, however, will reduce the rate of crystal growth. To optimize crystal growth rates, it is advisable to choose rotational speeds corresponding to specific melt heights. In this study, rotating the crystal at 20-30 rpm in a double-vortex pattern resulted in a higher average growth rate.

Effects of Graphitization Degree of Crucible on Sic Single Crystal Growth Process

Effects of additive carbon source on growth of SiC single crystal

Mechanisms of graphite crucible degradation in contact with Si–Al melts at high temperatures and vacuum conditions

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

The Effect of Graphite Type on the Growth of Dense SiC Ceramics Prepared by the HTPVT Method

A Study of the Effect of Quartz-to-Cristobalite Transformation on SiC Generation in Metallurgical-Grade Silicon Production

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Annealing, design and long-term operation of graphite crucibles for the growth of epitaxial graphene on SiC

Mass Loss in SiC Crystal Growth Process

Numerical investigation of the effect of a crucible cover on crystal growth in the industrial directional solidification process for silicon ingots

Effects of grain size of source material on growing 6H-SiC bulk crystal by physical vapor transport

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Effect of Heat Treatment on Carbon in Multicrystalline Silicon

Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

Effect of Removal of Silicon on Preparation of Porous SiC Ceramics Following Reaction Bonding and Recrystallization

Effects of Source Materials and Container on Growth Process of Sic Crystal

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

Effects of the Porosity of the Source Materials on the Initial Growth of 6H-Sic Crystal

The Growth of Sic Crystals from Cosi Molten Alloy Fluxes