Abstract:To improve the anti-oxidation ability of graphite, Al2O3 and SiC as additives, a uniform SiC coating was prepared on the surface of HTR graphite spheres by the pack cementation and sintering process. The microstructure of SiC coating was characterized by XRD, Raman spectroscopy, scanning electron microscopy, and the effect of Si/C ratio, Al2O3 and SiC content in the starting powder, sintering process conditions on the microstructure of SiC coating was also analyzed. The results show that the SiC coating on the surface of spherical graphite sample can be obtained with Si/C ratio higher than 3: 1, and the SiC coatings with different raw materials possess different microstructure and phase constitutes. The SiC coating is a kind of clear porous microstructure, while the main composition of the coating is β-SiC with some α-SiC and unreacted graphite. It is found that the content of Al2O3 has a significant influence on the penetration into the SiC coating, while the SiC content has a great influence on the microstructure between SiC coating and the substrate. When Al2O3 content is 10%, the bonding between the SiC coating and the substrate is better. When SiC content is 20%, the SiC coatings obtained have good densification and less lamellar accumulation of on the surface of the coatings. The SiC coatings sintered in Ar gas at 1750 °C have larger thickness and porous porosity microstructure, and the maximum thickness, about 400 ∼ 600 μm, can be achieved with the 2h of sintering time. The obtained SiC coatings sintered in vacuum at 1750 °C have a plate-like dense microstructure, in which the main composition of the coating is free Si, α-SiC and β-SiC, and the transitional area between SiC coating and the substrate is not obvious.

The Effect of Graphite Type on the Growth of Dense SiC Ceramics Prepared by the HTPVT Method

Effects of Starting Materials on Preparation and Properties of Pure SiC Ceramics Via the HTPVT Method

Fabrication of highly dense pure SiC ceramics via the HTPVT method

High Thermal Conductivity of Pure Dense SiC Ceramics Prepared Via HTPVT

Effects of Graphitization Degree of Crucible on Sic Single Crystal Growth Process

Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Effects of additive carbon source on growth of SiC single crystal

Preparation and Characterization of Pure SiC Ceramics by High Temperature Physical Vapor Transport Induced by Seeding with Nano SiC Particles

Effect of Different Particle Sizes and Pore-Making Agent Ratio on Properties of SiC Porous Ceramics

EFFECT OF AL(2)O(3) AND SIC CONTENT IN PACK CEMENTATION POWDERS ON THE MICROSTRUCTURE OF SIC COATINGS ON HTR GRAPHITE SPHERES

Effects Of Carbon Addition On Densification And Mechanical Properties Of Porous Si3n4 Ceramics

Fabrication and Characterization of Hierarchical Porous SiC Ceramics Via Gelcasting and Carbothermal Reduction Between Carbon and SiO

In-situ formation of bulk and porous h-AlN/SiC-based ceramics from geopolymer technique

Effect of Different Aluminum Sources on the Preparation and Properties of SiC/Cordierite Composite Porous Ceramics

Restraint of Nucleation of SiC Polycrystals Surrounding the Seed During SiC Single Crystal Growth

Nucleation and Growth of Polycrystalline SiC

Effect of Removal of Silicon on Preparation of Porous SiC Ceramics Following Reaction Bonding and Recrystallization

Polyimide-derived graphite barrier layer adhered to seed crystals to improve the quality of grown silicon carbide

Preparation of SiC Coated Graphite Composite Powders by Nitriding Combustion Synthesis

Fabrication, Structure and Properties of Porous SiC Ceramics with High Porosity and High Strength