Abstract:To tackle the high cost of single‐crystal silicon carbide (SiC) chips caused by ≈70% material waste during back grinding, a novel bonding method is proposed. By employing ion beam etching (IBE) to activate single‐crystal and polycrystal SiC surfaces, direct bonding (≈20 MPa) after annealing in the atmosphere is achieved while suppressing silicon oxide formation to lower interface thermal resistance. High‐quantity single‐crystal silicon carbide (SiC) is widely used in power electronics due to its excellent breakdown electric field strength and high thermal conductivity. However, back grinding during the chip fabrication generally results in ≈70% of single‐crystal SiC being wasted, leading to the high cost of SiC chips. In order to improve the utilization, single‐crystal SiC on polycrystal SiC (SoP‐SiC) is bonded. The challenge to achieve excellent bonding interfaces for such a system is the heterogeneous surface of polycrystals in which those grains with different orientations usually have different physical and chemical properties, making it difficult to achieve sufficiently smooth surfaces for bonding. Here, ion beam etching (IBE) is employed to activate the surface of polycrystal and single‐crystal SiC and achieve high bonding strength (up to ≈20 MPa) after annealing in the atmosphere. Sub‐nanometer‐scale electron microscopy and energy spectroscopy analysis showing the IBE method can effectively inhibit the formation of silicon oxide at the bonding interface, which is expected to reduce the interface thermal resistance according to the phonon spectrum analysis. This study provides a novel method to fabricate single‐polycrystal SiC junctions with high bonding strength and high thermal conductivity, which is valuable for the SiC industry.

Polyimide-derived graphite barrier layer adhered to seed crystals to improve the quality of grown silicon carbide

Restraint of Nucleation of SiC Polycrystals Surrounding the Seed During SiC Single Crystal Growth

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Polycrystalline silicon wafer with columnar grain structure grown directly on silicon carbide coated graphite substrate

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide langmuir-blodgett films on silicon substrate

Mechanism of Retaining Graphite Phase in the Graphite/sic Composite by Condense Layer with Fine SiC Grain Reaction Formed Via Nano Carbon Black

Polycarbosilane as a modulator for reaction-bonded silicon carbide processing of GNPs/Si mixtures

Coating dense Silicon Carbide layer on artificial graphites to achieve synergistically enhanced thermal conductivity and electronic insulation of polymer composites

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

The Effect of Graphite Type on the Growth of Dense SiC Ceramics Prepared by the HTPVT Method

Catalytic and Enhanced Effects of Silicon Carbide Nanoparticles on Carbonization and Graphitization of Polyimide Films

Multicrystalline Silicon Assisted by Polycrystalline Silicon Slabs As Seeds

Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth

Effects of Graphitization Degree of Crucible on Sic Single Crystal Growth Process

Effect of Interfacial Layer on Graphene Structure In-Situ Grown on Cemented Carbide

High quality and wafer-scale cubic silicon carbide single crystals

Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication

Effect of the Surface State of SiC Seed on the Crystal Quality

Adjusting Acetylene Gas Flow to Grow a Spheroidal Graphene Film with Controllable Layer Number and Lattice Defects

SiC Generation Mechanism in Photovoltaic Crystal Pulling Waste Graphite Infusion Cylinder