The microstructural evolution of isotropic graphite under silicon vapor infiltration

Xueyao Feng,Hailiang Huo,Zeyu Wang,Lei Zheng,Xiaohui Guo,Hongchao Zhao,Quangui Guo,Zhanjun Liu

DOI: https://doi.org/10.1016/j.jallcom.2024.175231

IF: 6.2

2024-06-20

Journal of Alloys and Compounds

Abstract:As the key crucible material in the third-era semiconductor SiC crystal furnace, isotropic graphite is plagued by silicon vapor corrosion, which severely restricts its service life. The microstructure of graphite is considered to be an important factor that affect the service lifespan. However, the interdependence between the key factors of silicon vapor infiltration and the microstructure of graphite has rarely been addressed. In this paper, two kinds of lab-made graphite blocks, named as GCAS1 and GCAS2, based on mesocarbon microbead (MCMB) (graphite powder as an additive at 0 and 5%, respectively) were compared with commercial-achieved SGL6510 using coke and pitch as raw materials. It was found that pore structure and interface play an important role in preventing silicon vapor infiltration. The smaller porosity and average pore diameter of GCAS1 (12.8% and 0.64 μm) and GCAS2 (10.5% and 0.44 μm) endow them with better resistance to silicon vapor corrosion, leading to reduced infiltration depths (125-170 μm for GCAS1, 110-150 μm for GCAS2, 140-205 μm for SGL6510). Furthermore, we found that significant silicon vapor infiltration was noticed at the poorly bonded interfaces, while negligible silicon vapor deposition was seen at the tightly bonded interfaces. Our work demonstrated that optimizing microstructure via pore modulation and interface bonding engineering would be an effective approach to improve resistance to silicon vapor corrosion.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering