Abstract:The development of high-performance organic light-emitting diodes (OLEDs) has become a current trend in the fields of display and lighting. However, the low hole-injection efficiency and consequent carrier imbalance seriously restrict the device performance of OLEDs. In this work, a solution-processable inorganic/organic bilayer composed of vanadium oxide (VO x )/poly(3,4-ethylenedioxythiophene):poly-(styrene sulfonate) (PEDOT:PSS) was reported as a hole-injection layer (HIL) in OLED to construct the matched interfacial energy level alignment that aimed at modifying hole-injection. This strategy not only facilitated the formation of a smooth PEDOT:PSS overlayer in the VO x /PEDOT:PSS bilayer, but also improved the hole-injection across the interface through the construction of step-wise energy level structure and hence enhanced carrier balance in device. Consequently, the device with VO x /PEODT:PSS bilayered HIL exhibited a maximum current efficiency of 67.23 cd A −1 and a maximum external quantum efficiency of 19.17 %, which were obviously superior to those of the reference devices with individual VO x HIL (54.85 cd A −1 and 15.58 %, respectively) and individual PEDOT:PSS HIL (58.74 cd A −1 and 16.84 %, respectively). Moreover, it was found that the stability of bilayered HIL-based device was improved substantially because the stable VO x layer effectively prevented the corrosion of indium tin oxide (ITO) anode by PEDOT:PSS. The study highlights a promising HIL for developing high-performance OLEDs.

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