Abstract:Wide-bandgap semiconductors exhibit much larger energy bandgaps than traditional semiconductors such as silicon, rendering them very promising to be applied in the fields of electronics and optoelectronics. Prominent examples of semiconductors include SiC, GaN, ZnO, and diamond, which exhibit distinctive characteristics such as elevated mobility and thermal conductivity. These characteristics facilitate the operation of a wide range of devices, including energy-efficient bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), as well as high-frequency high-electron-mobility transistors (HEMTs) and optoelectronic components such as light-emitting diodes (LEDs) and lasers. These semiconductors are used in building integrated circuits (ICs) to facilitate the operation of power electronics, computer devices, RF systems, and other optoelectronic advancements. These breakthroughs include various applications such as imaging, optical communication, and sensing. Among them, the field of power electronics has witnessed tremendous progress in recent years with the development of wide bandgap (WBG) semiconductor devices , which is capable of switching large currents and voltages rapidly with low losses. However, it has been proven challenging to integrat e these devices with silicon complementary metal oxide semiconductor (CMOS) logic circuits required for complex control functions . The monolithic integration of silicon CMOS with WBG devices increases the complexity of fabricating monolithically integrated smart integrated circuits (ICs). This review article proposes implementing CMOS logic directly on the WBG platform as a solution. However, achieving the CMOS functionalities with the adoption of WBG materials still remains a significant hurdle. This article summarizes the research progress in the fabrication of integrated circuits adopting various WBG materials ranging from SiC to diamond, with the goal of building future smart power ICs.

Wide Bandgap GaN Smart Power Chip Technology

GaN Smart Power IC Technology

Integrated Voltage Reference Generator for GaN Smart Power Chip Technology

Integrated voltage reference and comparator circuits for GaN smart power chip technology

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

GaN Power Integration Technology and Its Future Prospects

GaN Power IC Technology on P-Gan Gate HEMT Platform

(Invited) Wide Bandgap Semiconductor Based Devices for Digital and Industrial Applications

Design of a Bandgap Reference with a Wide Supply Voltage Range

Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs

Planar GaN Power Integration - The World is Flat

Recent Advances in Wide Bandgap Power Switching Devices

Gallium Nitride Power Semiconductor Devices Technology

Development of GaN Monolithic Integrated Circuits for Power Conversion

Recent Progress in SiC and GaN Power Devices

A nanopower CMOS bandgap reference with 30ppm/degree C from -30 degree C to 150 degree C.

Wide bandgap semiconductor-based integrated circuits

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

Wide Bandgap Semiconductors for Power Electronics

Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC–DC Converters

GaN-on-Si Power Semiconductor Technology