Abstract:Conventional silicon (Si)-based power devices face physical limitations-such as switching speed and energy efficiency-which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties-such as low ON-resistance and fast switching-and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems-for example, large lattice and thermal mismatches, as well as 'melt-back etching' at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

GaN-on-Si Power Semiconductor Technology

Gallium Nitride Power Semiconductor Devices Technology

A Review on the GaN-on-Si Power Electronic Devices

Recent Progress in SiC and GaN Power Devices

GaN Technology for Power Electronic Applications: A Review

Wide Bandgap Semiconductors for Power Electronics

GaN-based Power High-Electron-mobility Transistors on Si Substrates: from Materials to Devices

GaN Power Integration Technology and Its Future Prospects

Study of the epitaxial growth, physical properties and electronic devices of GaN-based semiconductor heterostructures

Compare gallium nitride, silicon carbide and monocrystalline silicon: application scenarios and research status

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

Evaluations Of Gan-On-Si Devices For Power Electronics Applications

Stability, Reliability, and Robustness of GaN Power Devices: A Review

A review on GaN-based two-terminal devices grown on Si substrates

Review of Recent Progress on Vertical GaN-Based PN Diodes

Gallium nitride vertical power devices on foreign substrates: a review and outlook

GaN-based power devices: Physics, reliability, and perspectives

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Gallium Nitride Power Devices: A State of the Art Review

A review of gallium nitride power device and its applications in motor drive

Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode.