Abstract:Reference voltage/current generation is essential to the Analog circuit design. There have been several ways to generate quality reference voltage using bandgap reference (BGR) and there are mainly two types: current mode and voltage mode. The current-mode bandgap reference (CBGR) is widely accepted in industry due to having an output voltage which is below 1 V. However, its drawbacks include a lack of proportional to absolute temperature (PTAT) current availability, a large silicon area, multiple operating points, and a large temperature coefficient (TC). In this paper, various operating points are explained in detail with diagrams. Similar to the conventional voltage mode bandgap reference (VBGR) circuits, modifications of the existing circuits with only two operating points have also been proposed. Moreover, the proposed BGR occupies a much smaller area due to eliminating the complimentary to absolute temperature (CTAT) current-generating resistor. A new self-biased opamp was introduced to operate from a 1.05 V supply, reducing systematic offset and TC of the BGR. The proposed solution has been implemented in 28 nm CMOS TSMC technology, and extraction simulations were performed to prove the robustness of the proposed circuit. The targeted mean BGR output is 500 mV, and across the industrial temperature range (−40 to 125 °C), the simulated TC is approximately 10.5 ppm/°C. The integrated output noise within the observable frequency band is 19.6 μV (rms). A 200-point Monte Carlo simulation displays a histogram with a 2.6 mV accuracy of 1.2% (±3-sigma). The proposed BGR circuit consumes 32.8 μW of power from a 1.05 V supply in a fast process and hot (125 °C) corner. It occupies a silicon area of 81 × 42 μm (including capacitors). This design can aim for use in biomedical and sensor applications.

A nanopower CMOS bandgap reference with 30ppm/degree C from -30 degree C to 150 degree C.

A Low Drift Curvature-Compensated Bandgap Reference with Trimming Resistive Circuit

Design and Realization of a High Precision Low Temperature Coefficient Bandgap Voltage Reference

A current reference based on bandgap technology with wide input voltage range by using 0.18µm BCD process

A Sub-1-V Nanopower MOS-Only Voltage Reference

A sub-1-V ultra-low power full CMOS bandgap reference woking in subthreshold region

A Ultra Low Power Dissipation CMOS Bandgap Reference

A 1.2 V,9 Ppm/℃ CMOS Bandgap Voltage Reference

A Novel CMOS Current Mode Bandgap Reference

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

A Low Voltage High Precision CMOS Bandgap Reference

A bandgap reference circuit with nominal value adjustable

A 10.5 ppm/°C Modified Sub-1 V Bandgap in 28 nm CMOS Technology with Only Two Operating Points

A 82μW Mixed-Mode sub-1V Bandgap reference with 25 ppm/°C Temperature Co-efficient with Simultaneous PTAT Generation

A 0.18μm CMOS band-gap voltage reference

A Novel Wide Temperature Range Bandgap Reference

A Bandgap Reference with Temperature Compensation and Its Output Buffer

CMOS 1.5V Bandgap Voltage Reference

A 0.8V CMOS bandgap voltage reference design

Improved Design of a Super Low Voltage Reference

A High Precision Bandgap Reference Used in Power Management Ics