Abstract:Silicon-based semiconductor quantum dot quantum computing coding with spin is compatible with traditional microelectronic processes, easy to expand, and can be isotope purified to improve the decoherence time, so it has attracted much attention. There are fewer reports on the work related to undoped Si/SiGe heterostructures grown by molecular beam epitaxy compared with chemical vapor deposition. An undoped Si/SiGe heterostructure has been grown by molecular beam epitaxy. The scanning transmission electron microscopy and energy-dispersive spectroscopy mapping results show an atomic-scale interface with a characteristic length of 0.53 nm. The surface root-mean-square roughness measured by atomic force microscope is 0.44 nm. The X-ray diffraction data show that the Si quantum well is fully strained and the in-plane strain is 1.03%. In addition, the performance of the two-dimensional electron gas was evaluated by low-temperature Hall measurements, which were conducted in the Hall-bar shaped field-effect transistor. It shows a peak mobility of 20.21×10 4 cm 2 ·V -1 ·s -1 when the carrier density is about 6.265×1011 cm-2 at 250 mK. The percolation density is 1.465×10 11 cm -2 . The effective mass of the two-dimensional electron gas is approximately 0.19 m 0 . The power exponential relationship (1.026) between carrier density and mobility at different gate voltages, along with the Dingle ratio (7-12) of the two-dimensional electron gas, indicates that the electrons are scattered by background impurities and semiconductor/oxide interfaces charges. The atomically sharp interface of Si/SiGe heterostructures created by molecular beam epitaxy is beneficial for researching the valley physics properties in silicon. The structural and transport characterizations in this paper lay the foundation for the optimization of Si-based semiconductor quantum dot quantum computing materials.

Valence Energy Level Structure Of Si1-Xgex/Si Quantum Disk

VALENCE ENERGY LEVEL STRUCTURE OF <font>Si</font><sub>1-x</sub><font>Ge</font><sub>x</sub>/<font>Si</font> QUANTUM DISK

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Stark Effect and Oscillator Strength in a Si1−xGex∕Si Quantum Disk

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Enhanced Quantum-Confined Pockels Effect Insigesuperlattices

Lattice Mismatch, Mechanical Properties and Lattice-Compensation Effect in Si1-xGex Alloys by Using First-Principles Calculations Combined with Virtual Crystal Approximation

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Structural, Electronic, and Optical Properties of Ordered Si1−Ge C Alloys: A First Principles Study

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Epitaxy and characterization of undoped Si/SiGe heterojunctions

The Interface Electronic States and Valence Band Offsets of the Si/GaP Heterojunction

Tunable electronic and dielectric behavior of GaS and GaSe monolayers.

Lattice-Dynamics Of Strained Si/Ge Superlattices

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire