Abstract:A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD), electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and atomic force microscopy (AFM) were applied to calculate the dislocation density of GaN-on-Si epitaxial wafers, and their performance was analyzed and evaluated. The ECCI technique, owing to its high lateral resolution, reveals dislocation distributions on material surfaces, which can visually characterize the dislocation density. While the CL technique is effective for low-density dislocations, it is difficult to accurately identify the number of dislocation clusters in CL images as the density increases. The AFM technique analyzes surface dislocation characteristics by detecting surface pits caused by dislocations, which are easily affected by sample and probe conditions. A prevalent method for assessing the crystal quality of GaN is the rocking curve of HR-XRD (ω-scan), which calculates the dislocation density based on the FWHM value of the curves. By comparing the above four dislocation characterization methods, the advantages and limitations of each method are clarified, which also verifies the applicability of DB=β29b2 for GaN-on-Si epitaxial wafers. This provides an important reference value for dislocation characterization in GaN-on-Si materials. The accuracy evaluation of dislocation density can truly and reliably reflect crystal quality, which is conducive to further optimization. Furthermore, this study can also be applied to other heterogeneous or homogeneous epitaxial materials.

Curvature Correction of Fwhm in the X-Ray Rocking Curve of Bent Heteroepitaxial Films

High-resolution X-Ray Diffraction Studies of Highly Curved GaN Layers Prepared by Hydride Vapor Phase Epitaxy

Analysis of the Curvature of GaN Thick Films Grown by HVPE

Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

Defects in heteroepitaxial CeO2/YSZ/Si(001) films by precise X-ray rocking curve distribution fitness

X-ray Double-Crystal Diffraction Studies of CdTe/GaAs Heteroepitaxial Layers

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

New Method of Distinguishing X-Ray Diffraction Curves about Laser Structure

Defects in heteroepitaxial CeO2/YSZ/Si(0 0 1) films by precise X-ray rocking curve distribution fitness

A new method for high resolution curvature measurement applied to stress monitoring in thin films

Thickness Measurement of GaN Films by X-ray Diffraction

Curvature-induced superconductivity enhancement for ultra-thin superconducting films

Modeling the Curvature and Interface Shear Stress of GaN-sapphire System

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Modification of curvature-based thin-film residual stress measurement for MEMS applications

Determination of Tetragonal Distortion of Al0.69In0.09Ga0.22N/GaN Heterostructure by RBS/C and HRXRD

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

X-ray reflectivities and FWHM of Hg1-xCdxTe and Cd1-zZnzTe materials

Evaluation of Both Composition and Strain Distributions in InGaN Epitaxial Film Using X-Ray Diffraction Techniques