Abstract:The accurate predicting of thermal conductivity of GaN semiconductors, especially GaN films, is of great importance for the thermal management in electronic devices. In this paper, a theoretical model based on the first-principles calculations and Debye-Callaway model is proposed to predict the thermal conductivity of GaN films, which is a function of temperature, isotope, point defects, dislocations, film thickness, and strain fields. Specifically, the coefficients in our theoretical model that used to capture umklapp scattering and phonon-isotope scattering are fitted with the data from first-principles calculations, and two sub-models for point defects scattering and dislocation scattering are discussed, respectively. The sub-model of boundary scattering with suppression function is introduced to describe the anisotropy of size effect, and the effect of in-plane strain (perpendicular to polar axis) is also discussed. The comparison between theoretical predictions and experimental data shows that the model performs well roughly in a large temperature range from 300 to 500 K, with an around 20% difference at room temperature. Our predicted temperature dependent thermal conductivity deviates slightly from the measurements, which may result from the lack of high-order phonon scattering in our model, e.g., four-phonon scattering. Our results also show that the first-principles calculations for GaN overestimates the influence of isotope scattering. We further study the thermal transport properties of GaN film which are influenced by the thickness, dislocation density, and point defect density through using the new theoretical model. Significant reduction of thermal conductivity is found to occur at a film thickness of 10 mu m, which is consistent with the findings from the first-principles calculations. The isotope and defects including point defects and dislocations are found to have a weak influence on the thermal conductivity when the thickness of GaN film is larger than 100 nm, while the influence becomes significant for the film with and below 100 nm in thickness. In addition, dislocations and point defects start to reduce thermal conductivity significantly when the surface density of dislocations increases to 10(10) cm(-2) and point defect density reaches 10(18) cm(-3).

Modeling the Curvature and Interface Shear Stress of GaN-sapphire System

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Theoretical analysis and numerical simulation on the fracture of GaN epitaxial films

Study of strain distribution in GeSi/Si strained heterostructure

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

Evaluating Interface Effect On Stresses In Thin Films By A Local Curvature Metrology With High Accuracy And Resolution

Thermo-mechanical Solution of Film/substrate Systems under Local Thermal Load and Application to Laser Lift-off of GaN/sapphire Structures

Thermal Conductivity Modeling of GaN Films

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Critical Thickness of GaN Film in Controllable Stress-Induced Self-Separation for Preparing Native GaN Substrates

Multilayer Thin Films/substrate System with Variable Film Thickness Subjected to Non-Uniform Misfit Strains

To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method

Modeling Phonon Thermal Conductivity in Spatially Confined GaN Nanofilms under Stress Fields and Phonon Surface Scattering

Stresses in a Multilayer Thin Film/Substrate System Subjected to Nonuniform Temperature

Correlation between microstructure deflections and film/substrate curvature under generalized stress fields

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire