Defects in heteroepitaxial CeO2/YSZ/Si(001) films by precise X-ray rocking curve distribution fitness

Chun-Hua Chen,Naoki Wakiya,Atsushi Saiki,Takanori Kiguchi,Kazuo Shinozaki,Nobuyasu Mizutani

DOI: https://doi.org/10.1016/S0921-4526(01)00923-1

2001-01-01

Abstract:In this paper, the theory of dislocation density and curvature measurements from X-ray rocking curves is extended to the case of double oxide heteroepitaxial CeO2(0 0 1)/YSZ(0 0 1)/Si(0 0 1) films mainly by high-resolution X-ray diffraction. According to this theory, we have successfully resolved the rocking curves of CeO2 and YSZ by two simple components. Thus. the dislocation density and radius of curvature of each layer can be calculated from the distribution of the square of measured FWHM versus 1/sin(2)theta. The results show that the YSZ layer has a higher dislocation density and a lower radius of curvature than CeO2. The high-resolution transmission electron microscopy (TEM) image of CeO2/YSZ interface cross-section shows a high dislocation density along the interface with an average interval similar to3.9 nm. (C) 2001 Elsevier Science B.V. All rights reserved.