Visualization of oxygen vacancies at CeO x /Y-HZO interface by spectrum imaging method and multivariate analysis

Koichi Higashimine,Mizuki Saito,Mohit,Eisuke Tokumitsu,Mohit Mohit,Eisuke TOKUMITSU
DOI: https://doi.org/10.35848/1347-4065/ad3652
IF: 1.5
2024-03-21
Japanese Journal of Applied Physics
Abstract:Abstract Electron energy loss spectroscopy - spectrum imaging measurements using a scanning transmission electron microscope are carried out to clarify the details of microstructure at the interface of the CeO x -capped Y-HZO film prepared by the chemical solution deposition method. We confirmed that by the present chemical solution deposition the independent capped layer of CeO x successively deposited on Y-HZO. The crystal structure of CeO x film is mainly the cubic CeO 2 structure with Ce 4+ . Chemical state maps are also successfully obtained by the multivariate analysis. We found that Ce 3+ and Ce 4+ coexist in the interface layer with cubic CeO 2 crystal structure containing O vacancy. The results of the quantitative elemental distribution maps of energy dispersive X-ray spectroscopy also supported that O vacancies exist at the interface.
physics, applied
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