Effects of deposition temperature on structural defect and electrical resistivity in heteroepitaxial La0.5Sr0.5CoO3/CeO2/YSZ/Si films

Chun-Hua Chen,Atsushi Saiki,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani

DOI: https://doi.org/10.1116/1.1502695

2002-01-01

Journal of Vacuum Science and Technology

Abstract:The effects of deposition temperature (500–800 °C) on the structural defect and electrical resistivity of heteroepitaxial La0.5Sr0.5CoO3 (LSCO) films with CeO2/YSZ double buffer layers on Si(001) substrates have been investigated mainly by high-resolution x-ray diffraction techniques. According to the deposition temperature range, two types of structural defect could be distinguished clearly. In the lower-temperature range of about 500–600 °C, the main defect of LSCO is the mosaic structure with a huge coherent distortion. In the higher range of about 600–800 °C, a distinct lattice constant gradient of LSCO was observed, indicating an occurrence of lattice relaxation when introducing an additional defect type, which are misfit dislocations. A high correlation between the electrical resistivity of LSCO, and the defect type and concentration was found. The distribution of electrical resistivity shows a mosaic dispersion degree dependence in 500–600 °C and a lattice relaxation degree dependence in 700–800 °C...