Effects of Deposition Temperature on Structure and Resistivity of Epitaxial La<sub>0.5</sub>Sr<sub>0.5</sub>CoO<sub>3</sub>/CeO<sub>2</sub>/YSZ/Si(001) Films

Chun Hua Chen,Naoki Wakiya,Kazuo Shinozaki,Nobuyasu Mizutani
DOI: https://doi.org/10.4028/www.scientific.net/KEM.214-215.177
2002-01-01
Key Engineering Materials
Abstract:The effects of deposition temperature (from 500 to 800 degreesC) on structure and resistivity of epitaxial La0.5Sr0.5CoO3 (LSCO) films with CeO2/YSZ double buffer layers on Si(001) substrates were investigated mainly by X-ray diffraction technique. A distinct lattice constant gradient of LSCO was found at 700-800 degreesC and had a high correlation with the electrical resistivity. The electrical resistivity of LSCO shows clear structure dependent with different defect mechanisms: one is mosaic boundary in 500-600 degreesC and the other is lattice mismatch in 700-800 degreesC.
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