Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Growth Process from Amorphous Gan to Polycrystalline Gan on Si (111) Substrates

Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

A Study on a Two-Step Technique of Growing Ga2O3/ZnO Films Ammoniated at Different Temperatures

Preparation and Properties of Gan Micro-Ribbons on Ga-Diffused Si (111) Substrates

Field Emission from Amorphous Gan Deposited on Si by Dc Sputtering

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

GaN grown on Si(111) with step-graded AlGaN intermediate layers