Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Field Emission from Amorphous Gan Deposited on Si by Dc Sputtering

Field Emission Behavior of Gan Nanoparticles and Nanobelts

Optical Properties of A-Gan Film Deposited by Dc Magnetron Sputtering

Field Emission from As Grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon/Silicon Heterojunctions Grown Using A Pulsed Filtered Cathodic Vacuum Arc Technique

Amorphous GaN films deposited by DC sputtering

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Field Emission Properties of Nanocomposite Carbon Nitride Films

Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Electron Field Emission Studies from Amorphous Carbon Thin Films

Electrical Properties of Nanocrystalline Gan Film Prepared by Magnetron Sputtering

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Optical Properties of Amorphous GaN Films Deposited by Sputtering

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

Optical Properties of A-Gan Deposited by Sputtering

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Field Emission from Amorphous Carbon Nitride Films Deposited on Silicon Tip Arrays

Field Emission From Gadolinium Silicide Prepared By Ion Implantation With Electron Beam Annealing

The influence of H2 plasma treatment on the field emission of amorphous GaN film

Field emission from GaN nanobelts with herringbone morphology