Abstract:Anisotropic sublimation behavior of wurtzite GaN is directly demonstrated using in situ heating transmission electron microscopy (TEM) technique. Sublimation preferentially occurs along [0001] and [0001 ̄ ] directions. A hexagonal pyramid with the apex pointing to [0001] direction is generated as the sublimation‐induced equilibrium crystal structure of wurtzite GaN. The observed phenomena is attributed to the asymmetric surface energies in wurtzite GaN. Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high‐resolution transmission electron microscope (TEM) with in situ heating capability, the lattice‐asymmetry‐driven anisotropic sublimation behavior is demonstrated of wurtzite GaN: sublimation preferentially occurs along the [0001 ̄ ] and [0001] directions in both GaN thin films and nanowires. Hexagonal pyramidal nanostructures consisting of six semipolar {11 ̄01} planes and one (0001 ̄ ) plane with the apex pointing to the [0001] direction are generated as a sublimation‐induced equilibrium crystal structure, which is consistent with the lattice‐asymmetry‐driven growth behaviors in wurtzite GaN. These findings offer a new insight into the thermal stability of wurtzite GaN and provide essential background for tailoring the structure of III‐nitrides for atomic‐scale manufacturing.

Anisotropic Properties of Gan Studied by Raman Scattering

Anticrossing of Axial and Planar Surface-Related Phonon Modes in Raman Spectra of Self-Assembled Gan Nanowires

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

The In-Plane Anisotropy of WTe2 Investigated by Angle-Dependent and Polarized Raman Spectroscopy

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

Abnormal vibrational anisotropy and thermal property of two-dimensional GeAs semiconductor

Lattice Dynamics of Gan/Aln Superlattices

Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Raman Spectroscopy of Nanocrystalline Gan Synthesized by Arc Plasma

Raman Scattering Studies of Individual Polar Semiconducting Nanowires: Phonon Splitting and Antenna Effects

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Momentum selectivity and anisotropy effects in the nitrogen K-edge resonant inelastic X-ray scattering from GaN