Abstract:In this paper, uniformly doped drift region of silicon carbide (SiC) super-junction (SJ) MOSFET is replaced with vertical variable doping profile (VVD) to achieve a better tradeoff between breakdown voltage (BV) and specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">${R}_{\text {sp,on}}$ </tex-math></inline-formula>). While it is known that the SJ device consists of two vertical columns of n- and p-type, SJ VVD feature lies in increasing the doping concentration from top to bottom in the N-column and vice-versa in the P-column within the drift region. The proposed SJ VVD allows <inline-formula> <tex-math notation="LaTeX">$\text {R}_{{\text {sp, on}}}$ </tex-math></inline-formula> to reduce further due to increased average doping concentration in conducting N-column and BV to increase further due to shifting of an electric field from corners to the center of the drift region. BV and <inline-formula> <tex-math notation="LaTeX">${R}_{\text {sp,on}}$ </tex-math></inline-formula> improved by 10% in an SJ VVD MOSFET and these parameters follow linear relationship similar to SJ MOSFET. The 2-D numerical simulations from Synopsys TCAD are used for investigating the static and dynamic characteristics of the device. In addition to 30% improvement in Baliga figure of merit, 35% improvement is obtained over SJ MOSFET in turn on and turn off switching energies for a clamped inductive circuit at 1200 V–20 A. Improved dynamic characteristics of SJ VVD can be attributed to reduction in gate charge (<inline-formula> <tex-math notation="LaTeX">${Q}_{g}$ </tex-math></inline-formula>) and miller capacitance (<inline-formula> <tex-math notation="LaTeX">${c}_{\text {rss}}$ </tex-math></inline-formula>) compared to SJ MOSFET.

The Influence of Collector Dopant Profile on Breakdown Voltage and Cutoff Frequency of Si‐based RF Bipolar Transistors

The Influence of the Collector Design on the F>inf<max>/inf<vs. F>inf<t>/inf<characteristics for Different Types of Si-based RF Bipolar Transistors

The Influence of the Collector Design on the Fmaxvs. Ft Characteristics for Different Types of Si-based RF Bipolar Transistors

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Influence of collector region design on SiGe power HBT linearity characteristics

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

A Study of Frequency Response in Silicon Heterojunction Bipolar Transistors with Amorphous Silicon Emitters

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Static and dynamic characterization of silicon carbide bipolar junction transistor

Design and Optimization of SiC Super-Junction MOSFET Using Vertical Variation Doping Profile

Comparison Between Mbe-Based Sige/Si Hbt And Si-Based Bipolar Transistor Technologies

Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions

UHV/CVD i-Si epitaxy and ion implantation doping for sub-micrometer N -Collector of SiGeHBT

Anomalous TID Susceptibility on Collector Bias for SOI High-Voltage Polysilicon Emitter Bipolar Transistors

A New Method of Improving the Current Gain of 4H-SiC Lateral BJTs

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt