GaAs pyramidal microtips grown by selective liquid-phase epitaxy

Hu Lizhong,Zhang Hongzhi,Wang Zhijun,Sun Jie,Zhao Yu,Liang Xiuping
DOI: https://doi.org/10.1016/j.jcrysgro.2004.07.078
IF: 1.8
2004-01-01
Journal of Crystal Growth
Abstract:We present a simple selective liquid-phase epitaxial growth of GaAs pyramidal microtips for integrated scanning near-field optical microscopy sensors. The technique comprises oxide mask formation, openings creation, and liquid-phase epitaxial growth. SiO2 mask is firstly formed on (001) GaAs substrate by liquid-phase deposition, periodic square windows are then created in the mask using photolithography and wet etching, and GaAs microtips are finally grown on the opening areas by liquid-phase epitaxy. Scanning electron microscopy images show high quality of the pyramidal microtips bounded by four equal {111} sidewalls. This differs greatly from those drawn from selective metalorganic chemical vapor deposition.
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