Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Synthesis of GaN Nanotip Triangle Pyramids on 3c–sic Epilayer/si Substrates Via an in Situ In-doping Technique

Synthesis of GaN Nanowires and Nano-Pyramids in a Two-Hot-boat Chemical Vapor Deposition System Via an In-doping Technique

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

Synthesis of N-Type SiC Nanowires with Tailored Doping Levels

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Pyramidal Shape Four V-grooved Silicon Substrate for Enhancing Cubic Phase Gallium Nitride Growth

Si[sub 3]N[sub 4] on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration