Thermal Stress and Displacement in Process of Producing CVD-SiC Mirror

Chen Daoyong,Zhang Jianhan,Zhang Yumin
DOI: https://doi.org/10.3969/j.issn.1007-2330.2009.06.014
2009-01-01
Abstract:The compact SiC film was deposited on the reaction bonded silicon carbon(RB-SiC)mirror by chemical vapor deposition(CVD)process.Because of the difference of thermo-physical properties between CVD-SiC and RB-SiC,thermal residual stress and thermal displacement appeared.This would affect the quality of the mirror to a large extent.In this paper,temperature field,stress field and thermal displacement of the mirror were analyzed by finite element method in the course of deposition process.The residual stress of the CVD-SiC film surface was tested by X-ray diffraction method.Results show there is a larger residual stress in the film.Residual stress is comprised of thermal stress and essential stress,and their magnitude is equivalent.Thermal displacement of mirror surface is small.
What problem does this paper attempt to address?