Research of the Growth and Nucleation Mechanisms of Diamond Film by Optical Emission Spectra and Raman Spectra
Fangqing Zhang,Yafei Zhang,Yinghu Yang,Wenjun Zhan,Guanghua Chen Xiangliu Jiang
DOI: https://doi.org/10.1016/B978-0-444-89162-4.50087-7
1991-01-01
Materials Science Monographs
Abstract:In order to investigate the nucleation and growth mechanisms of diamond thin film, the in situ optical emission spectra (OES) of direct-current (DC) arc plasma chemical vapor deposition (CVD) have been measured during the growth processes of diamond thin films under the case of various CH4/H2 and C2H2/H2 ratios. We compared the results of OES with that of Raman spectra. The results show that there are a great numbers of atomic H in the arc discharge plasma, this is the key factor of the growth of diamond thin films with a high rate and high quality, furthermore, the carbon sources and the H2 dilution ratios have strong effects on the quality of the films. When the ratios of CH4/(CH4+H2) and C2H2/(C2H2+H2) increase, the non-diamond carbon phase in the films increase due to the increasing of C2 radical and the decreasing of atomic H, moreover, when the carbon source is C2H2, and when C2H2/H2=2%, the IG/ID derived from Raman spectra is 33%, but when CH4 is served as carbon source and CH4/H2=2%, the IG/ID=10%, obviously as a carbon source, CH4 is better than C2H2.