The Effect of RF Power and Working Gases on the Dielectric Properties of Sialon Thin Films

YANG Xin,LIU Hong-jun,ZHANG Yi

DOI: https://doi.org/10.3969/j.issn.1006-6268.2009.04.005

2009-01-01

Abstract:Sialon thin films with thickness in the range of 80-300nm were prepared both at Ar/N2 and Ar/O2 ambience,the influence of sputter power on the dielectric performance was investigated.It was found that sialon thin films deposited in Ar and N2 atmosphere have higher relative dielectric constant,dielectric dissipation and leakage current density than those deposited in Ar and O2 atmosphere.For the sialon thin films fabricated with Ar and N2 mixed gas,the relative dielectric constant,dissipation parameter ΔVy,the forward and reverse leakage current density at a field strength of 50 MV/m,and the field breakdown strength were followed in range of 4.8～8.5,0.010～0.045V,10-10～10-8A and 201～476 MV/m,respectively;While for those fabricated with Ar and O2 mixed gas,the relative dielectric constant,ΔVy,the forward and reverse leakage current density,and the field breakdown strength were between 3.6-5.3,0.002-0.010 V,10-10～10-9A,and 260～305 MV/m,respectively.The Zn2SixGe1-xO4:Mn TFEL devices and thin film transistor with IGZO active layer wherein sialon thin films were used as insulator or buffer layer have substantially high breakdown strength and low leakage current density.