The effects of RF power on crystal structure and electrical properties of aluminum-doped zinc oxide films prepared by RF magnetron sputtering technique

Suthisa Leasen,N. Boonyopakorn
Abstract:In this research, aluminum-doped zinc oxide (AZO) films were prepared from 2 weight percentage (wt.%) of aluminum oxide (Al 2 O 3 ) doped zinc oxide (ZnO) by RF magnetron sputtering technique at various RF powers of 100, 150 and 200 W. In order to study the effect of RF power on crystal structure and electrical properties of deposited AZO films. The AZO films were deposited on glass slides at room temperature andpost-annealed at 500 ° C in vacuum for 1 hour. From XRD measurements, it was found that (002) plane increased with higher RF power from 100 to 150 W, however it became smaller at 200 W. In the same way, for mobility, it was consistent with the XRD spectra in which it was low or high for low and high crystallinity respectively. Carrier concentration of the AZO film deposited at 100 and 150 W were not different while it decreased for that deposited at 200 W. Decrease of carrier concentration implied that, at higher RF power, Al substitution for Zn atom was decreased but it segregated into interstitial sites, which was consistent with shifted (002) peak to lower 2 θ angle as can be seen in XRD spectra. Al atoms in the interstitial sites played a role of electron trap resulting in decrease of carrier concentration. Because of higher mobility, the lowest sheet resistance of 63.69 Ω /sq can be achieved for the AZO films deposited at the RF power of 150 W.
Engineering,Materials Science,Physics
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