Abstract:The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H2 flux, and the lowest resistivity of 4.02 × 10−4 Ω cm is obtained at a H2 flux of 10 sccm. The average transmittance in the visible region shows little dependence on H2 flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H2 flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H2 exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H2, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of Eg increases with the increase in carrier concentration due to Burstein–Moss effect.

The investigation of structural, surface topography, and optical behaviors of Al-doped ZnO thin films with annealing temperature deposited by RF magnetron sputtering

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Study the characterization of ZnO and AZO films prepared by spray pyrolysis and the effect of annealing temperature

Elucidating the microstructural and optoelectronic properties evolution of sputtered Al-doped MZO thin films

Effect of annealing on the structural, topographical and optical properties of sol gel derived ZnO and AZO thin films

Characteristics of Al-doped ZnO Thin Films Prepared in Ar + H2 Atmosphere and Their Vacuum Annealing Behavior

Studies on Morphology, Electrical and Optical Characteristics of Al-doped ZnO Thin Films Grown by Atomic Layer Deposition

Textured Surface Aluminum-Doped Zinc Oxide Thin Films Prepared by Direct Current Magnetron Sputtering

Investigation of ZnO∶Al Thin Films Deposited by RF Magnetron Sputtering

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Versatile r.f. magnetron sputtering doping method to produce aluminum‐doped zinc oxide films

Elaboration and Characterization of Mg-Doped ZnO Thin Films by Thermal Evaporation: Annealing Temperature Effect

Tailoring of Optical and Electrical Properties of Transparent and Conductive Al-doped ZnO Films by Adjustment of Al Concentration

MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

Microstructure and optical properties of ZnAlO films prepared by Magnetron sputtering

Study on Aluminum Concentration on Optical and Electrical Properties of AZO Thin Films Fabricated by Ultrasonic Spray Pyrolysis

Tailoring the Morphology, Optical and Electrical Properties of DC-sputtered ZnO:Al Films by Post Thermal and Plasma Treatments

Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

Effect of sputtering power on the microstructure and photelectric properties of Al doped ZnO thin films

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications