Abstract:In this research, aluminum-doped zinc oxide (AZO) films were prepared from 2 weight percentage (wt.%) of aluminum oxide (Al 2 O 3 ) doped zinc oxide (ZnO) by RF magnetron sputtering technique at various RF powers of 100, 150 and 200 W. In order to study the effect of RF power on crystal structure and electrical properties of deposited AZO films. The AZO films were deposited on glass slides at room temperature andpost-annealed at 500 ° C in vacuum for 1 hour. From XRD measurements, it was found that (002) plane increased with higher RF power from 100 to 150 W, however it became smaller at 200 W. In the same way, for mobility, it was consistent with the XRD spectra in which it was low or high for low and high crystallinity respectively. Carrier concentration of the AZO film deposited at 100 and 150 W were not different while it decreased for that deposited at 200 W. Decrease of carrier concentration implied that, at higher RF power, Al substitution for Zn atom was decreased but it segregated into interstitial sites, which was consistent with shifted (002) peak to lower 2 θ angle as can be seen in XRD spectra. Al atoms in the interstitial sites played a role of electron trap resulting in decrease of carrier concentration. Because of higher mobility, the lowest sheet resistance of 63.69 Ω /sq can be achieved for the AZO films deposited at the RF power of 150 W.

Effects of deposition power and pressure on the crystallinity of Al-doped ZnO thin films at glass substrates by low temperature RF magnetron sputtering

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Effects of DC Sputtering Power on the Properties of AZO Films Deposited at Room Temperature for CIGS Photovoltaics

Effects of Sputtering Pressure on Properties of Al Doped Zno Thin Films Dynamically Deposited by Rf Magnetron Sputtering

The effects of RF power on crystal structure and electrical properties of aluminum-doped zinc oxide films prepared by RF magnetron sputtering technique

Investigation of ZnO∶Al Thin Films Deposited by RF Magnetron Sputtering

Effect of sputtering power on the microstructure and photelectric properties of Al doped ZnO thin films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Effect of Film Thickness on Properties of Al-Doped Zno Film As Transparent Conducting Electrodes in Oleds

Effect of technologic parameters on the performances of ZAO thin films deposited by magnetron sputtering

Effects of substrate temperature on the efficiency of hydrogen incorporation on the properties of Al-doped ZnO films

Effect of the ZnO buffer layer thickness on AZO film properties

Studies on Morphology, Electrical and Optical Characteristics of Al-doped ZnO Thin Films Grown by Atomic Layer Deposition

Systematic control of carrier concentration and resisitivity in RF sputtered Zinc oxide thin films

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Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Characteristics of Atomic Layer Deposited Transparent Aluminum-Doped Zinc Oxide Thin Films at Low Temperature

Study on Aluminum Concentration on Optical and Electrical Properties of AZO Thin Films Fabricated by Ultrasonic Spray Pyrolysis