Preparation and Electric Characteristics of Gadolinium-Substituted Bismuth Titanate Ferroelectric Thin Films

Hongcheng Liu,Biao Wang,Rui Wang,Xinrong Liu
DOI: https://doi.org/10.1016/j.matlet.2006.09.037
IF: 3
2007-01-01
Materials Letters
Abstract:Gadolinium-substituted bismuth titanate (Bi4-xGdxTi3O12, BGT) thin films were deposited on the (111)Pt/Ti/SiO2/(100)Si substrates by a modified Sol-Gel process. With the aid of X-ray diffraction (XRD), the structure and appropriate Gd-substituted content x of BGT thin films were detected. The surface quality of the films was measured by means of an atomic force microscope (AFM) in tapping mode. The surface of BGT thin films was smooth and the phase was homogeneous. The ferroelectric properties of the films were investigated. When the Gd-substituted content x was equal to 0.75, the remanent polarization was the largest. The remanent polarization 2Pr value was equal to 15.4 mu C/cm(2) and the coercive field Ec value was 54.17 kV/cm. (c) 2006 Elsevier B.V. All rights reserved.
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