Single-crystalline Bulk Acoustic Wave Resonators Fabricated with AlN Film Grown by a Combination of PLD and MOCVD Methods

Peidong Ouyang,Xinyan Yi,Guoqiang Li

DOI: https://doi.org/10.1109/led.2024.3368433

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:Among the various methods that have been utilized to enhance the efficiency of Bulk Acoustic Wave (BAW) filters, the AlN piezoelectric layer quality improvement demonstrates robust functionality and operability. A combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD) methods of growing III-nitride films, the MEMS wafer process based on which was then constructed to prepare the Single-crystalline AlN Bulk Acoustic Resonators (SABAR). The as-grown film has a reduced full-width at half-maximums for AlN (0002) X-ray rocking curves of 0.21°, a lower average RMS of 0.140nm, and a higher effective coupling coefficient of 6.25%, indicating a 4097 Q-factor of SABAR resonator that precedes BAWs by an incredibly 182.5% with PVD sputtered AlN.

engineering, electrical & electronic